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PolarHV TM
Power MOSFET
N-Channel Enhancement Mode
IXTP 1R6N50P
IXTY 1R6N50P
V DSS
I D25
R DS(on)
= 500
= 1.6
≤ 6.5
V
A
Ω
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-220 (IXTP)
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
500
500
± 30
V
V
V
V GSM
Transient
± 40
V
G
D S
(TAB)
I D25
I DM
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
1.6
2.5
1.6
5
75
A
A
A
mJ
mJ
TO-252 (IXTY)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 50 Ω
10
V/ns
G
S
(TAB)
P D
T C = 25 ° C
43
W
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10 s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
Features
Weight
TO-252
TO-220
0.8
4
g
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- easy to drive and to protect
BV DSS
V GS = 0 V, I D = 250 μ A
500
V
Advantages
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 25 μ A
V GS = ± 30 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.5
± 100
1
50
V
nA
μ A
μ A
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
6.5
Ω
? 2006 IXYS All rights reserved
DS99444E(04/06)
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